2008-10-10 1 bcp51...-bcp53... 1 2 3 4 pnp silicon af transistors ? for af driver and output stages ? high collector current ? low collector-emitter saturation voltage ? complementary types: bcp54 ... bcp56 (npn) ? pb-free (rohs compliant) package 1) ? qualified according aec q101 type marking pin configuration package bcp51 bcp51-16 bcp52-16 bcp53-10 bcp53-16 * * * * * 1=b 1=b 1=b 1=b 1=b 2=c 2=c 2=c 2=c 2=c 3=e 3=e 3=e 3=e 3=e sot223 sot223 sot223 sot223 sot223 * marking is the same as type-name 1 pb-containing package may be available upon special request
2008-10-10 2 bcp51...-bcp53... maximum ratings parameter symbol value unit collector-emitter voltage bcp51 bcp52 bcp53 v ceo 45 60 80 v collector-base voltage bcp51 bcp52 bcp53 v cbo 45 60 100 emitter-base voltage v ebo 5 collector current i c 1 a peak collector current, t p 10 ms i cm 1.5 base current i b 100 ma peak base current i bm 200 total power dissipation- t s 120c p tot 2 w junction temperature t j 150 c storage temperature t stg -65 ... 150 thermal resistance parameter symbol value unit junction - soldering point 1) r thjs 15 k/w 1 for calculation of r thja please refer to application note thermal resistance
2008-10-10 3 bcp51...-bcp53... electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 10 ma, i b = 0 , bcp51 i c = 10 ma, i b = 0 , bcp52 i c = 10 ma, i b = 0 , bcp53 v (br)ceo 45 60 80 - - - - - - v collector-base breakdown voltage i c = 100 a, i e = 0 , bcp51 i c = 100 a, i e = 0 , bcp52 i c = 100 a, i e = 0 , bcp53 v (br)cbo 45 60 100 - - - - - - emitter-base breakdown voltage i e = 10 a, i c = 0 v (br)ebo 5 - - collector-base cutoff current v cb = 30 v, i e = 0 v cb = 30 v, i e = 0 , t a = 150 c i cbo - - - - 0.1 20 a dc current gain 1) i c = 5 ma, v ce = 2 v i c = 150 ma, v ce = 2 v, bcp51 i c = 150 ma, v ce = 2 v, bcp53-10 i c = 150 ma, v ce = 2 v, bcp51-16...bcp53-16 i c = 500 ma, v ce = 2 v h fe 25 40 63 100 25 - - 100 160 - - 250 160 250 - - collector-emitter saturation voltage 1) i c = 500 ma, i b = 50 ma v cesat - - 0.5 v base-emitter voltage 1) i c = 500 ma, v ce = 2 v v be(on) - - 1 ac characteristics transition frequency i c = 50 ma, v ce = 10 v, f = 100 mhz f t - 125 - mhz 1 pulse test: t < 300s; d < 2%
2008-10-10 4 bcp51...-bcp53... dc current gain h fe = ? ( i c ) v ce = 2 v 10 ehp00261 bcp 51...53 04 10 ma 0 10 3 10 5 5 10 1 10 2 10 1 c fe h 3 10 2 10 c 100 5 25 c -50 c collector-emitter saturation voltage i c = ? ( v cesat ), h fe = 10 0 10 ehp00264 bcp 51...53 cesat v 0.4 v 0.8 0 10 1 10 2 4 10 5 5 c ma 5 3 10 0.2 0.6 c 100 25 c c -50 base-emitter saturation voltage i c = ? ( v besat ), h fe = 10 0 10 ehp00263 bcp 51...53 besat v 0 4 10 c ma 0.2 1 10 2 10 3 10 0.4 0.6 0.8 1.2 v c 100 25 c -50 c collector cutoff current i cbo = ? ( t a ) v cbo = 30 v 0 10 ehp00262 bcp 51...53 a t 150 -1 4 10 cbo na 50 100 0 10 1 10 3 10 c 10 2 max typ
2008-10-10 5 bcp51...-bcp53... transition frequency f t = ? ( i c ) v ce = 10 v 10 ehp00260 bcp 51...53 03 10 ma 1 10 3 10 5 5 10 1 10 2 10 2 c t f mhz total power dissipation p tot = ? ( t s ) 0 15 30 45 60 75 90 105 120 c 150 t s 0 0.4 0.8 1.2 1.6 w 2.4 p tot permissible pulse load r thjs = ? ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -1 10 0 10 1 10 2 10 r thjs d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0 permissible pulse load p totmax / p totdc = ? ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 3 10 - p totmax / p totdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
2008-10-10 6 bcp51...-bcp53... edition 2006-02-01 published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2007. all rights reserved. attention please! the information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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